基本信息
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Career Trajectory
Bio
He has overseen the design, modeling, fabrication, and electrical characterization of prototype SiC electronic devices being developed for high-temperature or high-power operation in aerospace-related systems. His most notable past contributions to the SiC electronics field include the first demonstration of multi-kilovolt SiC rectifiers and identification of micropipes as crystal defects that limit the performance of SiC power devices, as well as pioneering contributions to SiC homo-epilayer and hetero-epilayer growth. Presently, Dr. Neudeck is focusing on development and demonstration of increasingly capable SiC extreme environment durable integrated circuit electronics technology.
Research Interests
Papers共 260 篇Author StatisticsCo-AuthorSimilar Experts
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Diffusion and defect data, solid state data Part B, Solid state phenomena/Solid state phenomena (2024): 125-129
Solid State Phenomena (2024): 7-12
Nuclear and Emerging Technologies for Space (NETS 2024)pp.66-66, (2024)
Venkateswarlu Gaddam,Shaurya S. Dabas, Jinghan Gao,David J. Spry,Garrett Baucom,Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer,Philip G. Neudeck, Honggyu Kim, Philip X. -L. Feng,Mark Sheplak,Roozbeh Tabrizian
arxiv(2024)
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Micromachinesno. 6 (2023)
Philip G. Neudeck,David J. Spry,Michael J. Krasowski,Carl W. Chang,José M. González,Srihari Rajgopal,Norman F. Prokop,Lawrence C. Greer,Dorothy Lukco, Shamir Maldonado-Rivera, Christina M. Adams
Proceedings of the International Symposium on Microelectronicsno. HiTEC, CICMT, Power (2023)
Proceedings of the International Symposium on Microelectronicsno. HiTEN (2023)
Key Engineering Materials (2023): 77-82
Key Engineering Materials (2023): 83-88
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Author Statistics
#Papers: 257
#Citation: 5299
H-Index: 33
G-Index: 62
Sociability: 6
Diversity: 2
Activity: 2
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