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个人简介
Nobuaki Otsuka was born in Tokyo, Japan, on April 11, 1962. He received the B.S. degree in applied physics from the University of Tokyo, Tokyo, Japan, in 1985.
In 1985, he joined the Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan, and worked on the development of EPROMs and Flash memories. From 1995 to 1996, he was a Visiting Research Scholar at the Computer Systems Laboratory, Stanford University, Stanford, CA, where he was engaged in circuit design for low-power and high-speed LSI memories. He is currently developing SRAMs at SoC Research and Development Center, Toshiba Corporation, Kawasaki, Japan.
研究兴趣
论文共 164 篇作者统计合作学者相似作者
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European Journal of Nuclear Medicine and Molecular Imagingno. 9 (2010): 1794-1795
mag(2010)
引用23浏览0引用
23
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Takahiro Sasaki,Atsushi Kawasumi,T. Yabe,Y. Takeyama,O. Hirabayashi,K. Kushida, Tohata Akihito,A. Katayama, Fujun Gou,Y. Fujimura,N. Otsuka
IEICE Technical Report; IEICE Tech. Rep.no. 6 (2008): 1-6
引用11浏览0引用
11
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2008 JOINT NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP AND INTERNATIONAL CONFERENCE ON MEMORY TECHNOLOGY AND DESIGN, PROCEEDINGSpp.97-+, (2008)
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作者统计
#Papers: 168
#Citation: 3168
H-Index: 25
G-Index: 33
Sociability: 6
Diversity: 3
Activity: 0
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