Natalia Seoane

Natalia Seoane received the M.Sc. degree in electronic physics and the Ph.D. degree in electronics and computer science from the University of Santiago de Compostela, Santiago de Compostela, Spain, in 2002 and 2007, respectively. Her M.Sc. thesis deals with the optimization and parallelization of the resolution of linear systems applied for the simulation of semiconductor devices, and her Ph.D. thesis is related to the study of the impact of intrinsic parameter fluctuations in high-electron mobility transistors. She was a Visiting Postgraduate Student at the Edinburgh Parallel Computing Centre, U.K., in 2006. In 2007, she was a Visiting Postdoctoral Researcher with the Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, U.K. She is a Member of Computer Architecture Group, Department of Electronics and Computer Science, University of Santiago de Compostela, where she works as a Postdoctoral Researcher. Her current research interests include Drift–Diffusion simulations of nanoscaled MOSFETs with a channel based on III–V semiconductors and quantum transport simulations using nonequilibrium Green's functions.