Nikita A. Pikhtin

Nikita A. Pikhtin (Member, IEEE) was born in Leningrad, Russia, on October 17, 1966. He received the M.S. degree (with Hons.) in optoelectronics in 1989. In 1983, he entered the Chair of Optoelectronics of V.I. Ulyanov (Lenin) Leningrad Electro-Technical Institute – an educational unit founded and headed by Prof. Zh.I. Alferov. In 1989, he joined the Semiconductor Luminescence and Injection Emitters Laboratory, Ioffe Institute, Russian Academy of Sciences, Saint Petersburg, Russia. Since 1989, he is a Member of the scientific staff with Semiconductor Luminescence and Injection Emitters Laboratory. His Ph.D. dissertation (2000) was devoted to development and investigation of InP-based high power lasers and superluminescent diodes. In 1992, within the frame of CNRS Fellowship, he spent one year with the University of Nice, Nice, France, where he was engaged in solid-state lasers and fiber pumping research. He is currently the acting Head of the Laboratory with Ioffe Institute. He is the author of more than 150 papers in national and international journals and conference proceedings. His research interests include the design, development, and manufacturing of high power semiconductor laser diodes, and devices on their base emitting in 650–1800 nm wavelength range.