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论文共 20 篇作者统计合作学者相似作者

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12.1 A 7nm 256mb SRAM in High-K Metal-Gate FinFET Technology with Write-Assist Circuitry for Low-Vmin Applications

Jonathan Chang,Yen-Huei Chen,Wei-Min Chan,Sahil Preet Singh,Hank Cheng,Hidehiro Fujiwara,Jih-Yu Lin,Kao-Cheng Lin,John Hung,Robin Lee,Hung-Jen Liao,Jhon-Jhy Liaw,Quincy Li,Chih-Yung Lin,Mu-Chi Chiang,Shien-Yang Wu

IEEE International Solid-State Circuits Conference（2017）

引用90浏览0EIWOS引用

A 7nm 256mb Sram In High-K Metal-Gate Finfet Technology With Write-Assist Circuitry For Low-V-Min Applications

2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.206-206, (2017)

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低V_MIN応用のための書込補助回路を備えた高kメタルゲートFinFET技術における12.1A7nm,256Mb SRAM【Powered by NICT】

Chang Jonathan,Yen-Huei Chen,Wei-Min Chan,Singh Preet,Cheng Hank, Fujiwara Hidehiro,Lin Jih-Yu,Lin Kao-Cheng,H Marsh John,Robin Lee,Liao Hung-Jen,Liaw Jhon-Jhy,Quincy Li, Chih-Yung Lin,Mu-Chi Chiang,Wu Shien-Yang

IEEE Conference Proceedings (2017): 207

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17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies

Hidehiro Fujiwara,Li-Wen Wang,Yen-Huei Chen,Kao-Cheng Lin,Dar Sun,Shin-Rung Wu,Jhon-Jhy Liaw,Chih-Yung Lin,Mu-Chi Chiang,Hung-Jen Liao,Shien-Yang Wu,Jonathan Chang

ISSCC（2015）

引用13浏览0EIWOS引用

A 64kb 16nm Asynchronous Disturb Current Free 2-Port Sram with Pmos Pass-Gates for Finfet Technologies

Hidehiro Fujiwara,Li-Wen Wang,Yen-Huei Chen,Kao-Cheng Lin,Dar Sun,Shin-Rung Wu,Jhon-Jhy Liaw,Chih-Yung Lin,Mu-Chi Chiang,Hung-Jen Liao,Shien-Yang Wu,Jonathan Chang

2015 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC)（2015）

引用32浏览0引用

A 16 Nm 128 Mb SRAM in High-<formula Formulatype="inline"> <tex Notation="TeX">$\kappa$</tex></formula> Metal-Gate FinFET Technology with Write-Assist Circuitry for Low-VMIN Applications

Yen-Huei Chen,Wei-Min Chan,Wei-Cheng Wu, Haijun Liao,K.H. Pan,Jhon-Jhy Liaw,Tang-Hsuan Chung,Quincy Li,Chih-Yu Lin,Mu-Chi Chiang,Shien-Yang Wu,Jonathan Chang

IEEE journal of solid-state circuitsno. 1 (2015): 170-177

引用23浏览0引用

Field effect transistors and method of forming the same

Chiachu Liu,Kuei Shun Chen,Muchi Chiang,Yaokwang Wu, Bifen Wu, Huanjust Lin,Hsiaotzu Lu,Huichi Huang

mag（2015）

引用22浏览0引用

Control Fin Heights in FinFET Structures

Yishien Mor,Hsiaochu Chen,Muchi Chiang

mag（2014）

引用26浏览0引用

FinFET design with LDD extensions

Yishien Mor,Hsiaochu Chen,Muchi Chiang

mag（2014）

引用23浏览0引用

13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications

Yen-Huei Chen,Wei-Min Chan,Wei-Cheng Wu,Hung-Jen Liao,Kuo-Hua Pan,Jhon-Jhy Liaw,Tang-Hsuan Chung,Quincy Li,George H. Chang,Chih-Yung Lin,Mu-Chi Chiang,Shien-Yang Wu,Sreedhar Natarajan,Jonathan Chang

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (2014)

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