In 1998 he joined AMO, where he later became Head of the Technology Department. He has worked in the field of nano-CMOS devices, including FinFET and SOI-MOSFETs, novel high-k /metal gate stacks and graphene and 2D materials. The latter includes the world’s first top-gated graphene MOSFET, a novel graphene-based non-volatile memory, vertical graphene transistors and graphene NEMS. He received the “NanoFutur” young researchers’ award from the German Ministry for Education and Research in 2006 and a Lynen Research Fellowship from the Alexander von Humboldt Foundation in 2007. In 2008, he joined Harvard University in Cambridge, USA, where he pioneered a helium ion-based nanolithography method for graphene and investigated graphene photodetectors. In September 2010, he became Professor at KTH, where he initiated the graphene activities within the School of ICT. He received an ERC Starting Grant and became Full Professor at the University of Siegen with a DFG Heisenberg-Professorship in 2012. In February 2017, Prof. Lemme was appointed Full professor at RWTH Aachen University and Scientific Director of AMO GmbH. He has managed several German BMBF Projects with industry partners like Infineon, AMD and Qimonda and was the coordinator of the FP 7 EU Projects “GRAND” and “GRADE” (Graphene-based Devices and Circuits for RF Applications).