Masahiro Takei

Munehisa Takei was born in Gunman, Japan, on February 25, 1986. He received the B.S. and M.S. degrees, in 2008 and 2010, respectively, from Meiji University, Kawasaki, Japan, where he is currently working toward the Ph.D. degree. Since April 2010, he has been with the School of Science and Technology, Meiji University, working on evaluating Si-strain, which is used to improve the MOSFET performance by UV-Raman spectroscopy. Mr. Takei is a member of the Japan Society of Applied Physics.