Lara Casiez - LETI, University Grenoble Alpes

基本信息

Career Trajectory

Bio

Lara Casiez received the B.Sc. degree in engineering from INSA Lyon, the University of Science and Technology in France, and the master's degree of engineering in advanced material science from INSA Lyon, France, in 2018. She is currently employed as a Ph.D. Student with CEA-LETI. She works on CMOS compatible light sources based on Ge heterostructures alloyed with Sn.

Research Interests

Papers共 23 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Ex-situ N-Type Doped Carrier-Injection Layers in Direct Bandgap GeSn LEDs

L. Casiez,C. Cardoux,P. Acosta Alba,N. Bernier,J. Richy,N. Pauc,V. Calvo,N. Coudurier, P. Rodriguez, O. Concepci,D. Buca,M. Frauenrath,J. M. Hartmann,A. Chelnokov,V. Reboud

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

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Enhancing the Detectivity of Direct Bandgap Ge0.86Sn0.14 Photodiodes by Layer Transfer

C. Cardoux, E. Kroemer,L. Casiez,M. Frauenrath,N. Pauc,V. Calvo,S. Assali,J. M. Hartmann,N. Coudurier, P. Rodriguez,J. Chretien,J. Widiez,O. Gravrand,A. Chelnokov,V. Reboud

2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS (2024)

Cited0Views0EIWOSBibtex

Direct Band Gap Ge0.85Sn0.15 Photodiodes for Room Temperature Gas Sensing

C. Cardoux,L. Casiez,M. Frauenrath,N. Pauc,V. Calvo,J. M. Hartmann,N. Coudurier,P. Rodriguez, P. Grosse,C. Constancias,O. Lartigue,P. Barritault,O. Gravrand,A. Chelnokov,V. Reboud

2023 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS (2023)

Cited2Views0EIWOSBibtex

Room Temperature Spectral Characterization of Direct Band Gap Ge0.85Sn0.15 LEDs and Photodiodes

C. Cardoux,L. Casiez,N. Pauc,V Calvo,N. Coudurier, P. Rodriguez,J. Richy,P. Barritault,O. Lartigue,C. Constancias,M. Frauenrath,J. M. Hartmann,A. Chelnokov,O. Gravrand,V Reboud

SILICON PHOTONICS XVII (2022)

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Impact of Strain on Si and Sn Incorporation in (si)gesn Alloys by STEM Analyses

Florian Castioni, Loic Henry,Lara Casiez,Nicolas Bernier,Vincent Reboud,Jeremie Chretien,Nicolas Pauc,Vincent Calvo,Jerome Richy,Audrey Jannaud,Vincent Delaye,Eric Robin,Jean-Michel Hartmann,Pascale Bayle-Guillemaud

Journal of applied physics（2022）

Cited1Views0Bibtex

Photoelectron Spectroscopy Study of GeSn Epitaxial Layers for Photonic Applications

M. Bouschet,E. Martinez,J. M. Fabbri,L. Casiez,A. Quintero,J. Da Fonseca,C. Jany,P. Rodriguez,A. Chelnokov,J. M. Hartmann,V Reboud,O. Renault

Microelectronic Engineering（2021）

Cited1Views0EIBibtex

Room Temperature Optically Pumped GeSn Microdisk Lasers

J. Chretien,Q. M. Thai,M. Frauenrath,L. Casiez,A. Chelnokov,V. Reboud,J. M. Hartmann,M. El Kurdi,N. Pauc,V. Calvo

Applied physics letters（2022）

Cited25Views0Bibtex

Progress in Germanium Tin (gesn) Photonic Crystal Lasers

Quang Minh Thai,Jeremie Chretien,Mathieu Bertrand,Joris Aubin,Lara Casiez,Alexei Chelnokov,Jean-Michel Hartmann,Vincent Reboud,Nicolas Pauc,Vincent Calvo

IEEE journal of selected topics in quantum electronicsno. 1: Semiconductor Lasers (2022): 1-9

Cited4Views0EIWOSBibtex

(G03 - Best Student Presentation Award) Advances in In-situ Boron and Phosphorous Doping of SiGeSn

Marvin Frauenrath,Lara Casiez,Omar Concepción Díaz,Nicolas Coudurier,Nicolas Gauthier,Sidi-Mohammed N'hari,Emmanuel Nolot,Philippe Rodriguez,Dan Buca,Nicolas Pauc,Vincent Reboud,Jean-Michel Hartmann

ECS Meeting Abstractsno. 32 (2022): 1165-1165

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Recrystallization of Thick Implanted GeSn Layers with Nanosecond Laser Annealing

L. Casiez,N. Bernier,J. Chretien,J. Richy,D. Rouchon, M. Bertrand,F. Mazen,M. Frauenrath,A. Chelnokov,J. M. Hartmann,V. Calvo,N. Pauc,V. Reboud,P. Acosta Alba

Journal of applied physics（2022）

Cited5Views0Bibtex

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