kenichi hosoya

Kenichi Hosoya (M'98) received the B.A. degree in pure and applied science and the Ph.D. degree in engineering, both from the University of Tokyo, Tokyo, Japan, in 1991 and 2009, respectively. In 1991, he joined NEC Corporation, Kawasaki, Japan, where he has been engaged in the development of millimeter-wave GaAs high electron mobility transistors (HEMTs) and their microwave monolithic integrated circuits (MMICs) for 60-GHz-band wireless communication systems, GaAs heterojunction bipolar transistor (HBT) MMICs for 77-GHz-band automotive radar systems, and ultra-high-speed ICs for 40-Gbps optical communication systems based on GaAs HBTs, InP HBTs, and CMOS. He is now a Principal Researcher with Device Platforms Research Laboratories, NEC Corporation. His current interests include beamforming protocol and propagation-channel analysis for millimeter-wave wireless personal area networks (WPANs). Dr. Hosoya is a member of the Institute of Electronics, Information and Communication Engineers (IEICE), Japan. He was awarded APMC'99 Microwave Prize presented at 1999 Asia Pacific Microwave Conference, Singapore.