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论文共 114 篇作者统计合作学者相似作者

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Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage
Hajime Kuwazuru, Taisei Aso,Dong Wang,Keisuke Yamamoto
Materials Science in Semiconductor Processing (2024): 108427
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High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing
Taishiro Koga,Takaya Nagano,Kenta Moto,Keisuke Yamamoto,Taizoh Sadoh
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
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Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization
Linyu Huang,Kenta Moto,Takamitsu Ishiyama, Kaoru Toko,Dong Wang,Keisuke Yamamoto
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
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Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤20 nm) by Post-Annealing for Thin-Film Transistor Application
Taishiro Koga,Takaya Nagano,Kenta Moto,Keisuke Yamamoto,Taizoh Sadoh
2023 30th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)pp.161-162, (2023)
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Rectifying Schottky Contact in ZrN/Polycrystalline P-Ge
Kenta Moto,Kaoru Toko, Tomonari Takayama,Toshifumi Imajo,Takamitsu Ishiyama,Keisuke Yamamoto
IEEE journal of the Electron Devices Society (2023): 553-558
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Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition
Kenta Moto, Kaoru Toko, Tomonari Takayama,Takamitsu Ishiyama,Keisuke Yamamoto
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
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作者统计

#Papers: 115

#Citation: 1033

H-Index: 23

G-Index: 28

Sociability: 5

Diversity: 2

Activity: 15

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