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个人简介
Lau’s research work focuses on the development of monolithic integration of semiconductor devices and systems on industry-standard silicon substrates by MOCVD. She was an early explorer of this approach and has produced record-breaking results in this area. In 2008 her group was the first to demonstrate the highest mobility and millimeter-wave (fT > 200 GHz) III- V transistors lattice-matched to InP grown directly on Si. She also led the development of 1.5 µm room-temperature electrically pumped III-V quantum dot lasers epitaxially grown on CMOS-standard (001) Si substrate. Recently, her group developed the lateral aspect ratio trapping (LART) technique to grow III-V active devices in the same plane as the Si layer enabling efficient coupling with Si waveguides on silicon-on-insulator (SOI). They demonstrated telecom InGaAs/InP quantum well lasers and high-performance photodetectors selectively grown on SOI by LART.
研究兴趣
论文共 423 篇作者统计合作学者相似作者
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期刊级别
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CLEO 2024 (2024)
ACS PHOTONICS (2024)
Laser & photonics reviewsno. 1 (2024)
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2024): 529-534
IEEE transactions on device and materials reliabilitypp.1-1, (2024)
Optics Expressno. 19 (2023)
Journal of applied physicsno. 13 (2023)
APPLIED PHYSICS LETTERSno. 26 (2023)
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作者统计
#Papers: 420
#Citation: 8918
H-Index: 46
G-Index: 71
Sociability: 7
Diversity: 1
Activity: 3
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