基本信息
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Career Trajectory
Bio
Kazuo Nakazato was born in Japan on 18 October, 1952. He received the B.S., M.S. and Ph.D. degrees in physics from the University of Tokyo, Tokyo, Japan, in 1975, 1977, and 1980, respectively. In 1981, he joined the Central Research Laboratory, Hitachi Ltd., Tokyo, Japan, working on high-speed silicon self-aligned bipolar devices SICOS (sidewall base contact structure), which were adopted in main frame computer Hitachi M-880/420. In 1989, he moved to Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cambridge, U.K., as a Senior Researcher and a Laboratory Manager, working on experimental and theoretical study of quantum electron transport in semiconductor nano structures, including single-electron memory. Since 2004, he has been a Professor of intelligent device with the Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya, Japan. His main concerns are BioCMOS technology, single molecule-CMOS hybrid devices, and CMOS analog circuits for integrated sensors.
Research Interests
Papers共 226 篇Author StatisticsCo-AuthorSimilar Experts
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Dislocations in Solidspp.117-120, (2023)
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Author Statistics
#Papers: 229
#Citation: 4248
H-Index: 29
G-Index: 49
Sociability: 6
Diversity: 3
Activity: 4
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