基本信息
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职业迁徙
个人简介
Karl Hofmann was born in Mannheim, Germany. He received the Ph.D. degree in physics from RWTH Aachen, in 2001. He joined Infineon Technologies as a Development Engineer. He has published several papers on device reliability. He is currently focusing on the development of emerging non-volatile memories. He is a member of the Technical Committee of the International Memory Workshop (IMW).
研究兴趣
论文共 7 篇作者统计合作学者相似作者
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引用量
主题
期刊级别
合作者
合作机构
2023 IEEE International Integrated Reliability Workshop (IIRW) (2023)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2023)
2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022)pp.109-111, (2022)
作者统计
#Papers: 7
#Citation: 32
H-Index: 3
G-Index: 5
Sociability: 3
Diversity: 1
Activity: 1
合作学者
合作机构
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