Professor Banerjee has also spearheaded the use of nanomaterials for overcoming power dissipation and other fundamental challenges in nanoelectronics. This includes the invention of the kinetic inductor, which exploits the kinetic inductance of graphene at room temperature leading to the highest inductance-density materials ever made, that helped overcome a 200-year old limitation of the Faraday inductors and has opened up a new pathway for designing ultra-compact IoT systems (Nature Electronics 2018). Other innovations from his lab are the world’s thinnest channel (only two atomic layers of MoS2) band-to-band tunneling transistor that overcame a fundamental power consumption challenge in all electronic devices since the invention of the first transistor (Nature 2015), the first 2D-semiconductor channel based FET-biosensor with unprecedented sensitivity and promise of single-molecule detection (ACS Nano 2014), as well as a breakthrough interconnect technology based on doped-multilayer-graphene, which overcomes the fundamental limitations of conventional metals and provides an attractive pathway toward energy-efficient and highly reliable interconnects for next-generation integrated circuits (Nano Letters 2017). His recent demonstration of CMOS-compatible graphene has brought this material to the brink of large-scale deployment in the semiconductor industry (IEDM 2018)