K. Ahmeda

Khaled Ahmeda received the B.Eng. degree of electrical and electronics engineering from the College of Petroleum Engineering, Al-Brega, Sirte University, Libya, in 2003, the M.Sc. degree in microelectronics from Universiti Kebangsaan Malaysia, Bangi, Malaysia, in 2005, and the Ph.D. degree in GaN HEMTs for power and RF applications. In 2006, he became an Assistant Lecturer with Sirte University. He worked as a Research Assistance with Swansea University, from 2017 to 2018, and a Research Visitor with the Nanoelectronic Devices Computational Group and the GaN Devices Modeling Group, Swansea University, from 2018 to 2020. He is currently working as an Associate Tutor with the Cardiff School of Technologies, Cardiff Metropolitan University. His current research interests include modeling of III-nitrides-based devices, SiC MOSFET, reliability, and characterization of GaN HEMTs.