Jae Hoon Jung

Jae-Hoon Jung received the B.S. degree in electrical engineering from Hanyang University, Seoul, South Korea, in 2006. He joined Samsung Electronics, Hwaseong, South Korea, in 2006, where he has been a Staff Engineer since 2013, and contributed to the design of main memory of DDR2/3, mobile DRAMs such as LPDDR2/3/4/5, and high-bandwidth memory such as HBM2. His research interests are high-bandwidth interface circuits and various analog circuits.