Joseph Salzman was born in Buenos Aires, Argentina, in 1945. He received his B.Sc., M.Sc., and Ph.D. degrees in physics from Tel-Aviv University, Tel-Aviv, Israel, in 1973, 1979, and 1984, respectively. During 1984–1986, he was a Bantrell Post-Doctoral Fellow in applied physics at the California Institute of Technology, Pasadena. In 1986, he joined Bell Communication Research as a Member of Technical Staff, working in photonic research. He then joined the Department of Electrical Engineering, the Technion–Israel Institute of Technology, Haifa, Israel, where he became a Senior Lecturer in 1987, an Associate Professor in 1993, and a Full Professor in 2003. During 1993–1994, he was a Visiting Professor with TeleDanmark Research, Copenhagen, Denmark, and during 1994–1995, a Visiting Professor at Cornell University, Ithaca, NY. At the Technion, he is the Head of the Laboratory for Novel Semiconductors for Photonic and Electronic Applications, in which epitaxial growth of thin semiconductor films is being performed by organometallic vapor phase epitaxy. Since 1999, his laboratory activities concentrate on the development of III-nitride semiconductors, the study of the material properties, microfabrication of photonic and electronic devices, and device studies. He is a member of the Solid State Institute and the Microelectronics Research Center, both at the Technion. His research interests include photonic devices, semiconductor lasers and light-emitting diodes, integrated optics, epitaxial crystal growth, electronic devices, microfabrication and characterization of semiconductor devices.