基本信息
浏览量:51
职业迁徙
个人简介
Jacques Graffeuil (A'88–SM'90) was born in Agen, France. He received the Ingénieur degree from the Institut National des Sciences Appliquées, Toulouse, France, in 1969, and the Thèse d'Etat degree in electronic engineering from Paul Sabatier University, Toulouse, in 1977.
Since 1970, he has been an Assistant Professor with Paul Sabatier University. He has also been with the Laboratory for Analysis and Architecture of Systems, National Center of Scientific Research (LAAS-CNRS), Toulouse, where he has been engaged in research on noise in III–V semiconductor devices. His research first dealt with Gunn effect devices and later with electrical properties of gallium arsenide Schottky-barrier FETs. He is currently a Professor of electronic engineering with Paul Sabatier University and the University of Toulouse and a Senior Scientist with the Microwave Devices and Integrated Circuits Group, LAAS-CNRS. He is currently conducting research works on noise and nonlinear properties of III–V FETs, HBTs, and microwave silicon devices, silicon or III–V monolithic microwave integrated circuit design, and microwave silicon MEMS. He has authored or coauthored over 150 technical papers and three books, and he is the holder of some patents.
研究兴趣
论文共 158 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
msra(2005)
引用23浏览0引用
23
0
GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGSpp.277-280, (2005)
引用25浏览0EIWOS引用
25
0
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2004)
加载更多
作者统计
#Papers: 161
#Citation: 2317
H-Index: 24
G-Index: 36
Sociability: 6
Diversity: 3
Activity: 0
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn