I-Hsin Tseng - Department of Materials Science and Engineering, National Yang Ming Chiao Tung University

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论文共 12 篇作者统计合作学者相似作者

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Stress Relaxation and Grain Growth Behaviors of (111)-Preferred Nanotwinned Copper During Annealing

Jyun-Yu Lai,Dinh-Phuc Tran,Shih-Chi Yang,I-Hsin Tseng,Kai-Cheng Shie,Jihperng Leu,Chih Chen

Nanomaterials（2023）

引用3浏览0WOS引用

Distribution of Elastic Stress As a Function of Temperature in a 2-Μm Redistribution Line of Cu Measured with X-ray Nanodiffraction Analysis

Wei-You Hsu,I-Hsin Tseng,Ching-Yu Chiang,K. N. Tu,Chih Chen

Journal of materials research and technology/Journal of Materials Research and Technology（2022）

引用1浏览0引用

Enhancement of electromigration lifetime of copper lines by eliminating nanoscale grains in highly 111-oriented nanotwinned structures

Dinh-Phuc Tran, Hung-Hsuan Li,I-Hsin Tseng,Chih Chen

Journal of materials research and technology (2021): 6690-6699

引用14浏览0引用

Effect of thermal stress on anisotropic grain growth in nano-twinned and un-twinned copper films

I-Hsin Tseng,Yun-Ting Hsu,Jihperng Leu,K. N. Tu,Chih Chen

Acta Materialia（2021）

引用30浏览0引用

Effect of Oxidation on Electromigration in 2-Μm Cu Redistribution Lines Capped with Polyimide

I-Hsin Tseng,Po-Ning Hsu,Wei-You Hsu,Dinh-Phuc Tran,Benson Tsu-Hung Lin,Chia-Cheng Chang,K. N. Tu,Chih Chen

Results in physics（2021）

引用9浏览0引用

Electromigration Failure Mechanisms of 〈1 1 1〉 -Oriented Nanotwinned Cu Redistribution Lines with Polyimide Capping

I-Hsin Tseng,Po-Ning Hsu,Tien-Lin Lu,K. N. Tu,Chih Chen

Results in physics（2021）

引用33浏览0引用

Electromigration in 2 μm Redistribution Lines and Cu-Cu Bonds with Highly <111>- oriented Nanotwinned Cu

I-Hsin Tseng,Kai-Cheng Shie,Benson Tzu-Hung Lin,Chia-Cheng Chang,Chih Chen

2020 IEEE 70th Electronic Components and Technology Conference (ECTC)pp.479-484, (2020)

引用10浏览0EIWOS引用

Kinetic study of grain growth in highly (111)-preferred nanotwinned copper films

Chih-Han Tseng,I-Hsin Tseng, Yu-Pei Huang,Yun-Ting Hsu,Jihperng Leu,K.N. Tu,Chih Chen

Materials Characterization (2020): 110545

引用0浏览0引用

High Electromigration Resistance of Nanotwinned Cu Used in Redistribution Layers of Fan-out

I-Hsin Tseng,Benson Lin,Chia-Cheng Chang,Chih Chen

Impact（2020）

引用1浏览0EIWOS引用

Effect of Annealing on the Toughness of 40-Μm-wide Nanotwinned Cu Lines

Wei-You Hsu,Yu-Jin Li,I-Hsin Tseng,Benson Tzu-Hung Lin,Chia-Cheng Chang,Chih Chen

Electronic Components and Technology Conferencepp.906-911, (2020)

引用0浏览0EIWOS引用

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