Hye-Yoon Joo

Hye-Yoon Joo (Member, IEEE) received the B.S. and M.S. degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2006 and 2009, respectively. She is currently working toward the Ph.D. degree in electrical engineering from Seoul National University, Seoul, South Korea, from 2016. She joined Samsung Electronics, Hwaseong, South Korea, in 2009, where she was involved in the design of DRAM. Her research interests include high-speed interface design, equalizing techniques, clock recovery techniques, and next-generation memory architecture.