Hiroshi Oka - National Institute of Advanced Industrial Science and Technology (AIST)

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个人简介

Hiroshi Oka (Member, IEEE) received the B.S. degree from the Department of Applied Chemistry and Bioengineering, Osaka City University, in 2013, and the M.S. and Ph.D. degrees from the Division of Advanced Science and Biotechnology, Osaka University, in 2015 and 2018, respectively. He is currently a Senior Researcher with the Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Japan. His research interests include the cryogenic CMOS, Si qubit devices, Ge-based CMOS, and photonic devices.

研究兴趣

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Pauli Spin Blockade at Room Temperature in S/Zn-codoped Silicon Tunnel Field Effect Transistors

Yoshisuke Ban, Kimihiko Kato,Shota Iizuka,Hiroshi Oka,Shigenori Murakami,Koji Ishibashi, Satoshi Moriyama,Takahiro Mori,Keiji Ono

arxiv（2024）

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Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs

Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui,Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama,Takahiro Mori

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation

Shunsuke Shitakata,Hiroshi Oka,Kimihiko Kato,Takumi Inaba,Shota Iizuka,Hidehiro Asai,Takahiro Mori

Device Research Conferencepp.1-2, (2024)

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Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

Takumi Inaba,Hiroshi Oka,Hidehiro Asai,Hiroshi Fuketa,Shota Iizuka,Kimihiko Kato,Shunsuke Shitakata,Koichi Fukuda,Takahiro Mori

IEEE ACCESS (2024): 12458-12464

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Effect of Interface Trap Charge on Coulomb Oscillation in MOS-type Quantum Dots

Hidehiro Asai, Shota Iizuka, Junichi Hattori, Koichi Fukuda,Tsutomu Ikegami,Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Takahi Nakayama,Takahiro Mori

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Transistor Matrix Array for Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures

Tomoko Mizutani,Kiyoshi Takeuchi,Takuya Saraya,Hiroshi Oka,Takahiro Mori,Masaharu Kobayashi, Toshiro Hiramoro

2024 IEEE 36TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, ICMTS 2024 (2024)

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Neural-network-based Transfer Learning for Predicting Cryo-Cmos Characteristics from Small Datasets

Takumi Inaba,Yusuke Chiashi, Minoru Ogura,Hidehiro Asai,Hiroshi Fuketa,Hiroshi Oka,Shota Iizuka,Kimihiko Kato,Shunsuke Shitakata,Takahiro Mori

Applied physics express (2024)

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A Correction Method of Split C-V Characteristics in MOSFETs by Using Transmission Line Model for Accurate Extraction of Effective Mobility

Zhao Jin, Yutong Chen, Xueyang Han,Hiroshi Oka,Takahiro Mori,Kasidit Toprasertpong,Mitsuru Takenaka,Shinichi Takagi

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Large-Scale Characterization Classifying Double Quantum Dots in Isoelectronic-Trap-Assisted Tunnel Field-Effect Transistors

Yusuke Chiashi, Takumi Inaba,Atsushi Yagishita, Makoto Kato, Tomohiro Ishikawa,Oka Hiroshi, Kimihiko Kato, Hidehiro Asai, Minoru Ogura, Shota Iizuka,Takahiro Mori

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Comparative Analysis of Cryogenic Threshold Voltage and On-current Variability in 65nm Bulk and FDSOI MOSFETs

Zihao Liu,Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya,Hiroshi Oka,Takahiro Mori,Masaharu Kobayashi,Toshiro Hiramoto

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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