基本信息
浏览量:35
职业迁徙
个人简介
Hiroki Sugiyama (Member, IEEE) received the B.S. and M.S. degrees in physics from the Tokyo Institute of Technology, Tokyo, Japan, in 1991 and 1993, respectively. In 1993, he joined NTT, Tokyo, Japan, where he has been engaged in research and development of epitaxial growth and characterization technology of III–V compound semiconductors for ultrahigh-speed electron devices. He is currently a Distinguished Laboratory Specialist and a Senior Research Engineer with NTT Device Technology Laboratories. Mr. Sugiyama is a Member of the Japan Society of Applied Physics and Physical Society of Japan.
研究兴趣
论文共 186 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
JOURNAL OF APPLIED PHYSICSno. 14 (2024)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEno. 13 (2024)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEno. 13 (2024)
2024 Tenth International Conference on Communications and Electronics (ICCE)pp.712-717, (2024)
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS (2024)
OPTICS EXPRESSno. 16 (2024): 27614-27623
Novel In-Plane Semiconductor Lasers XXIII (2024)
ELECTRONICSno. 2 (2023)
Solid-state electronics (2023): 108788-108788
加载更多
作者统计
#Papers: 184
#Citation: 1692
H-Index: 23
G-Index: 34
Sociability: 6
Diversity: 3
Activity: 22
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn