Henri Jaffrès

H. Jaffrès received the B.Sc. degree from the University of Toulouse, Toulouse, France, and the Ph.D. degree from the Laboratoire de la Matière Condensée, Toulouse, in 1999. In 1999, he joined Unité Mixte de Physique, French National Center of Research (CNRS)-Thales, Palaiseau, France, as a Postdoc, where he worked on spin-dependent tunneling structures for sensing devices and has been a Researcher since 2001. His recent work concerns the properties of tunneling structures based on ferromagnetic semiconductor GaMnAs [tunneling magnetoresistance (TMR), switching by spin transfer] and the TMR of MnAs-based structures.