Heli Vora - Components Research, Intel Corporation

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论文共 24 篇作者统计合作学者相似作者

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PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors

Soumitra Joy, Kaustubh Joshi, Ahmad Zubair,Samuel Bader, Jason Peck,Michael Beumer,Pratik Koirala,Marko Radosavljevic,Heli Vora,Inanc Meric,Han Wui Then

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

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Advancements in 300 Mm GaN-on-Si Technology with Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors

Qiang Yu, Ali A. Farid,Ibukunoluwa Momson,Jeffrey Garrett,Heli Vora,Samuel Bader,Ahmad Zubair,Pratik Koirala,Michael Beumer,Andrey Vyatskikh, Paul Nordeen,Thomas Hoff,Marko Radosavljevic,Said Rami,Frank O'Mahony,Han Wui Then

IEEE microwave and wireless technology lettersno. 6 (2024): 745-748

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DrGaN: an Integrated CMOS Driver-GaN Power Switch Technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D Monolithic Si PMOS

Han Wui Then,M. Radosavljevic,S. Bader,A. Zubair,H. Vora,N. Nair,P. Koirala,M. Beumer, P. Nordeen, A. Vyatskikh,T. Hoff,J. Peck,R. Nahm,T. Michaelos, E. Khora, R. Jordan, C. Hoffman, N. Franco,A. Oni, S. Beach, D. Garg, D. Frolov,A. Latorre-Rey, A. Mitaenko, J. Rangaswamy,S. Sarkar,S. Ahmed, V. Rayappa, H. Chiu,A. Hubert, S. Brophy, N. Arefm, N. Desai,H. Krishnamurthy,J. Yu,K. Ravichandran, P. Fischer

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Enhancement-Mode 300-Mm GaN-on-Si(111) with Integrated Si CMOS for Future Mm-Wave RF Applications

Han Wui Then,M. Radosavljevic,Q. Yu,A. Latorre-Rey,H. Vora,S. Bader, I. Momson, D. Thomson,M. Beumer,P. Koirala,J. Peck,A. Oni,T. Hoff, R. Jordan,T. Michaelos,N. Nair, P. Nordeen, A. Vyatskikh,I. Ban,A. Zubair,S. Rami,P. Fischer

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERSno. 6 (2023): 835-838

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A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology

Qiang Yu,Derek Thomson,Han Wui Then,Alvaro Latorre-Rey,Marko Radosavljevic,Michael Beumer,Pratik Koirala,Nicole Thomas,Nityan Nair,Heli Vora,Samuel Bader,Said Rami

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)pp.144-147, (2022)

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Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (ronxqgg) of 3.1 Mohm-Nc at 40V and Ft/fmax of 130/680Ghz

Han Wui Then,M. Radosavljevic,P. Koirala,M. Beumer,S. Bader,A. Zubair,T. Hoff, R. Jordan,T. Michaelos,J. Peck,I. Ban,N. Nair,H. Vora,K. Joshi,I. Meric,A. Oni, N. Desai,H. Krishnamurthy,K. Ravichandran,J. Yu, S. Beach, D. Frolov,A. Hubert,A. Latorre-rey,S. Rami, J. Rangaswamy,Q. Yu, P. Fischer

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

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Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then,M. Radosavljevic,P. Koirala,N. Thomas,N. Nair,I Ban,T. Talukdar, P. Nordeen, S. Ghosh,S. Bader,T. Hoff,T. Michaelos,R. Nahm,M. Beumer, N. Desai,P. Wallace, V Hadagali,H. Vora,A. Oni,X. Weng,K. Joshi,I Meric, C. Nieva,S. Rami,P. Fischer

2021 IEEE International Electron Devices Meeting (IEDM)pp.11.1.1-11.1.4, (2021)

引用17浏览0EIWOS引用

Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration

Han Wui Then,M. Radosavljevic,N. Desai, R. Ehlert, V. Hadagali,K. Jun,P. Koirala, N. Minutillo,R. Kotlyar,A. Oni, M. Qayyum, J. Rode, J. Sandford,T. Talukdar,N. Thomas,H. Vora,P. Wallace,M. Weiss,X. Weng, P. Fischer

international electron devices meeting（2020）

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