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Research Interests

Papers共 59 篇Author StatisticsCo-AuthorSimilar Experts

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Structural and Electrical Characteristics of GaN HEMTs With In Situ SiNx Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas
Zhe Huang,Haochen Zhang, Yao Chen,Fangzhou Liang, Lei Yang,Kun Liang,Zhanyong Xing, Hu Wang, Mingshuo Zhang, Jiayao Li, Yankai Ye,Shiping Guo,Haiding Sun
IEEE Transactions on Electron Devicesno. 8 (2024): 4590-4595
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Room-Temperature Organic Passivation for GaN-on-Si HEMTs with Improved Device Stability
Haochen Zhang,Kunpeng Hu, Yue Sun,Lei Yang,Zhe Huang,Yifu Guo,Junyang Deng,Kun Liang,Zhanyong Xing,Hu Wang,Mingshuo Zhang, Yao Chen,Shiping Guo,Mengmeng Li,Haiding Sun
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 3 (2024): 1469-1473
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Deep Learning-Based Data Processing Method for Transient Thermoreflectance Measurements
Yali Mao, Shaojie Zhou, Weiyuan Tang,Mei Wu,Haochen Zhang,Haiding Sun,Chao Yuan
JOURNAL OF APPLIED PHYSICSno. 9 (2024)
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GaN-based E-mode P-Fets with Polarization-Doped P-Type Graded AlGaN Channels
Zhanyong Xing,Haochen Zhang, Yankai Ye,Fangzhou Liang, Lei Yang,Zhe Huang,Kun Liang, Hu Wang, Mingshuo Zhang, Jiayao Li,Chengjie Zuo,Haiding Sun
JOURNAL OF PHYSICS D-APPLIED PHYSICSno. 38 (2024)
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2Deg-Concentration-modulated High-Power-Density AlGaN/GaN RF HEMTs
Haochen Zhang, Hu Wang, Mingshuo Zhang, Lei Yang, Yankai Ye, Hongtu Qian, Xinchuan Zhang,Chengjie Zuo, Yansong Yang, Yi Pei,Haiding Sun
IEEE electron device letterspp.1-1, (2024)
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Author Statistics

#Papers: 58

#Citation: 1132

H-Index: 18

G-Index: 33

Sociability: 5

Diversity: 2

Activity: 110

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