Gregor Koblmuller

Gregor Koblmüller received the M.Sc. and Ph.D. degrees in physics from the Vienna University of Technology (TU Wien), Vienna, Austria, in 2002 and 2005, respectively. During his M.S. and Ph.D. thesis, he performed all his experimental work with the Corporate Research Division, Infineon Technologies AG, Munich, Germany. In 2005, he became a Postdoctoral Researcher and Project Scientist with the Materials Department, University of California at Santa Barbara (UCSB). In 2009, he joined the Walter Schottky Institute, Technische Universität München (TUM), Garching, Germany, as Group Leader for III–V semiconductor materials, where his current research focuses on epitaxial integration of III–arsenide nanostructures and heterostructures (quantum dots, nanowires) on silicon, the fabrication of ultrahigh mobility electron gases, and nanofabrication of sub-nanometer pattern for organic and molecular electronics. Dr. Koblmüller was the recipient of several awards, including the IUPAP Young Author Best Paper Award and the Young Investigator MBE Award 2010.