Giovanni Verzellesi was born in Italy in 1964. He received the “Laurea” degree (cum laude) in Electrical Engineering from the University of Bologna, Italy, in 1989, and the Ph.D. degree also in Electrical Engineering from the University of Padova, Italy, in 1994. He was a visiting graduate student at the University of California, Santa Barbara, in 1993-94. Since 2006, he has been a Full Professor of Electronics at the University of Modena and Reggio Emilia, Italy. Previously: Associate Professor of Electronics with the University of Modena and Reggio Emilia, Italy, 2000-2006; Research Associate with the University of Modena and Reggio Emilia, Italy, 1999-2000. Research Associate with the University of Trento, Italy, 1994-1999. Current research interests are in the fields of GaN field-effect transistors for power RF and power switching applications, InGaN/GaN blu light-emitting diodes, and silicon radiation detectors. Past research topics included: InGaAs MOSFETs for post-11-nm CMOS technology nodes, GaAs and InP field-effect transistors for RF applications, Si and SiC radiation detectors, Si optical and chemical sensors, impact-ionization effects and measurement/modelling of parasitic resistances in Si bipolar transistors. He has co-authored more than 120 papers in refereed international journals (including more than 45 papers in IEEE journals), more than 130 papers in proceedings of international conferences, 3 book chapters, 4 patents. He has served as a Technical Program Committee member for the following conferences: a) IEEE IEDM (2004, 2005); b) IEEE IRPS (2010, 2011); c) ESREF (2010-); d) PRIME (2011); e) EXMATEC (2012); f) ESSDERC (2014). He has been a Senior Member of the IEEE since 2008. In 2017-2020 he has been an Editor of the IEEE Transactions on Electron Devices for the subject area of compound semiconductor devices.