On the Dynamic RON, Vertical Leakage and Capacitance Behavior in Pgan HEMTs with Heavily Carbon-Doped Buffers

Marcello Cioni,Alessandro Chini,Nicolo Zagni,Giovanni Verzellesi,Giovanni Giorgino, Giacomo Cappellini,Cristina Miccoli,Gaetan Toulon, Tariq Wakrim,Maria Eloisa Castagna,Aurore Constant,Ferdinando Iucolano

IEEE ELECTRON DEVICE LETTERS（2024）

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MODFETs,HEMTs,Capacitance,Doping,High-voltage techniques,Capacitance-voltage characteristics,Stress,p-GaN HEMTs,dynamic RON,C-doping,compensation ratio,output capacitance

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