Greg Freeman

Greg Freeman (S'82–M'90–SM'03) received the B.S.E.E. degree from the University of Delaware, Newark, in 1984 and the M.S.E.E and Ph.D. degrees from Stanford University, Stanford, CA, in 1986 and 1991, respectively. Since 1991, he has been with IBM's East Fishkill, NY facility, where he has been involved in many technical positions in technology development and device design. He initially served in a variety of characterization and failure analysis roles in bipolar, logic, and DRAM technologies. From 1995 to 2004, he was involved in IBM SiGe BiCMOS technologies, responsible for device diagnostics on the first commercially qualified SiGe HBT technology in 1996, followed by device and technology design of several IBM technologies, including IBM's 90- and 120-GHz BiCMOS technologies. From 2000 to 2004, he was a Manager of a device design and RF characterization and compact modeling group. His accomplishments included during that time are the design, characterization, analysis, and modeling of IBM's 200-GHz and world-record 375-GHz SiGe HBTs. Since late 2004, he has managed the SOI CMOS device design departments, in joint alliance projects with IBM, Sony, Toshiba, Freescale, and AMD/Global Foundries, developing 65-, 45-, and, now, 22-nm SOI technologies. He has authored or coauthored over 60 publications and is the holder of 26 patents.