Impact of Technology Scaling in Sub-100 Nm Nmosfets on Total-Dose Radiation Response and Hot-Carrier Reliability

Rajan Arora,Zachary E. Fleetwood,En Xia Zhang,Nelson E. Lourenco,John D. Cressler,Daniel M. Fleetwood,Ronald D. Schrimpf,Akil K. Sutton,Greg Freeman,Brian Greene

IEEE transactions on nuclear science（2014）

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关键词

32-nm,45-nm,65-nm,BOX (buried-oxide),CMOS (complementary metal oxide semiconductor),HCR (hot carrier reliability),nFET (field effect transistor),SOI (silicon-on-insulator),TID (total ionizing dose)

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