Francesco Bertazzi received the Laurea and Ph.D. degrees in electronics engineering from the Politecnico di Torino, Turin, Italy, in 2000 and 2003, respectively. He was a Visiting Scholar with the Department of Electrical and Computer Engineering, Boston University, Boston, MA, USA. Since 2008, he has been a Professor with the Dipartimento di Elettronica, Politecnico di Torino. His Ph.D. studies were focused on electromagnetic modeling of traveling-wave structures for optoelectronic applications and nonlinear physics-based noise analysis of RF and microwave devices. His research activities with Boston University include material-theory-based modeling of band structures, vibrational properties, and carrier scattering rates, essential for the study of the complex electronic, transport, and optical properties of novel wide-gap semiconductors, in particular III-nitrides and II-VI oxide semiconductors. His current research activity focuses on density matrix and nonequilibrium Green's function modeling of carrier transport and recombination processes in optoelectronic devices (HgCdTe infrared photodetectors, InGaN light-emitting diodes and VCSELs).