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个人简介
Since he joined Samsung Electronics Company, Ltd., Kyungki-Do, Korea, in 1983, he has been involved in the diffusion process development of 64 K and 256 K DRAM, and process integration of 1 Mega, 4 Mega, and 16 Mega DRAM development until 1993. After his Ph.D. study at UC Berkeley, in 1998, he rejoined Samsung Electronics, where he is now a Vice President of the R&D Center. After the successful development of 0.15 m and 0.13 m 256M DRAMs, 90 nm NAND Flash, and 100 nm high-speed 72 M SRAM, in 1999, 2001, 2002, and 2003, respectively, he is leading the development projects of nano-CMOS transistor, memory cell transistors, and the advanced technologies for mobile/graphic DRAMs.
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HCI INTERNATIONAL 2024 POSTERS, PT III, HCII 2024 (2024): 92-101
International journal of human-computer interactionpp.1-14, (2023)
Virtual realityno. 2 (2022): 815-828
Yong Min Kim,Joong Hee Lee,Myung Hwan Yun,Donggun Park,Gee Won Shin, Hye Soon Yang, Dong Wook Lee, Seok Ho Ju
PROCEEDINGS OF THE 20TH CONGRESS OF THE INTERNATIONAL ERGONOMICS ASSOCIATION (IEA 2018), VOL VII: ERGONOMICS IN DESIGN, DESIGN FOR ALL, ACTIVITY THEORIES FOR WORK ANALYSIS AND DESIGN, AFFECTIVE DESIGN (2019): 1428-1431
journal of engineering researchno. 2 (2019): 281.0-297.0
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#Papers: 346
#Citation: 9358
H-Index: 45
G-Index: 74
Sociability: 7
Diversity: 0
Activity: 0
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