Daniel W. Storaska

Daniel W. Storaska (S'95–M'00) received the B.S. degree in physics from Miami University, Oxford, OH, USA, and the B.S. degree in electrical engineering from Columbia University, New York, NY, USA, in 1995 and 1997, respectively. He received the M.E. degree in electrical engineering from Rensselaer Polytechnic Institute, Troy, NY, USA, in 2002. He joined IBM's DRAM Development Alliance, a joint venture between IBM, Siemens, and Toshiba, in 1997. He was a member of the design teams which successfully developed the world's smallest 1 Gb DRAM, as well as one with the world's fastest random access cycle time. In 2001, he joined the IBM High-Speed Serial (HSS) design organization, where he has been developing a variety of characterization techniques and circuits required for high-speed serial communications, from models for studying signal integrity to methods for calibrating PLLs. His current interests are in low-power protocols. He holds 18 U.S. patents.