D-H Ko - Department of Material Science and Engineering, Yonsei University

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Synthesis of High Conformalty Ti-Si X-N Films Using (CH 3 ) 3 CCl and SiH 4; Density Functional Theory Simulation and Film Characterization

Jinho Jeon, Hongsoo Park,Dae-Hong Ko

THIN SOLID FILMS (2024)

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Strain Behavior and Dopant Activation of Heavily In-Situ B-doped SiGe Epitaxial Films Treated by Nanosecond Laser Annealing

Chunghee Jo,Kiseok Lee, Dongmin Yoon,Dae-Hong Ko

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

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Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling

J.-H. Yoo,H.-B. Jo,I.-G. Lee, S.-M. Choi,J.-M. Baek,S T. Lee,H. Jang, M W. Kong,H H. Kim,H J. Lee,H.-J. Kim, H.-S. Jeong, W.-S. Park,D H. Ko,S. H. Shin,H.-M. Kwon, S K. Kim,J G. Kim,J. Yun,T. Kim,K.-Y. Shin,T.-W. Kim,J.-K. Shin,J.-H. Lee,C.-S. Shin,K.-S. Seo,D.-H. Kim

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

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Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling

J.-H. Yoo,H.-B. Jo,I.-G. Lee, S.-M. Choi,J.-M. Baek,S. T. Lee,H. Jang, M. W. Kong, H. H. Kim,H. J. Lee,H.-J. Kim, H.-S. Jeong, W.-S. Park,D.-H. Ko,S. H. Shin,H.-M. Kwon, S. K. Kim, J. G. Kim,J. Yun, T. Kim, K.-Y. Shin,T.-W. Kim,J.-K. Shin, J.-H. Lee,C.-S. Shin,K.-S. Seo,D.-H. Kim

VLSI Technology and Circuitspp.1-2, (2023)

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Lg = 130 Nm GAA MBCFETs with Three-Level Stacked In0.53Ga0.47As Nanosheets

H.-B. Jo,I.-G. Lee,J.-M. Baek,S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong,W.-S. Park,J.-H. Yoo, H.-Y. Lee,D. Y. Yun,SW. Son,D.-H. Ko,Tae-Woo Kim,H.-M. Kwon, S.-K. Kim,Jun-Gyu Kim,J. Yun,T. Kim,J. H. Lee,J.-H. Lee,C.-S. Shin,K.-S. Seo,Dae-Hyun Kim

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

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Characterization of Defects in III-V Semiconductor Materials (inp, GaAs and InGaAs/ InP on Si) in Nano-sized Patterns by Transmission Electron Microscopy

J.H. Lee,Y.D. Cho,I.G. Lee,C.S. Shin, W.K. Park,D.H. Kim,D.H. Ko

Microscopy and Microanalysisno. S3 (2016): 1540-1541

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Size and Shape Effect of SiC Source/drain on Strained Si

D. -S. Byeon,S. -W. Kim,D. -H. Ko

Journal of nanoscience and nanotechnology（2014）

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Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

Kim, T.-W.,Kim, D.-H., Koh, D.H.,Kwon, H.M.,R. H. Baek,D. Veksler,C. Huffman,K. Matthews,S. Oktyabrsky, A. Greene,Y. Ohsawa,A. Ko, H. Nakajima, M. Takahashi, T. Nishizuka,H. Ohtake,S. K. Banerjee,S. H. Shin,D. -H. Ko, C. Kang,D. Gilmer,R. J. W. Hill,W. Maszara,C. Hobbs,P. D. Kirsch

Electron Devices Meetingpp.16.3.1-16.3.4, (2013)

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Channel Strain Evolution of Recessed Source/Drain Si1-xCx Structures by Modifying Scaling Factors

S. -W. Kim,D. -S. Byeon,M. Jung,D. -H. Ko,S. Chopra,Y. Kim,H. -J. Lee

ECS transactionsno. 9 (2013): 801-805

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Strain Measurement in FinFET Structures with Epitaxially Grown SiGe on Source/drain Region by Nano Beam Diffraction (NBD) Method

S.-W. Kim,D.-S. Byeon, H. Jang,D.-H. Ko

Microscopy and microanalysisno. S2 (2013): 732-733

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