Christopher L. Frewin

C. Locke received the B.S. degree in physics and the M.S. degree in engineering science from the University of South Florida (USF), Tampa. He is currently working toward the Ph.D. degree in electrical engineering in the Department of Electrical Engineering, USF. His research interests include 3C–SiC growth on Si and novel substrates, with emphasis on crystal defects and stress reduction. He has pioneered the use of a poly-Si seed layer to realize novel poly-3C–SiC films on oxide release layers for MEMS applications. After graduation, he plans to pursue a research position to work on SiC growth, processing, and MEMS devices.