Chengmin Li (Member, IEEE) received the B.S. degree in electrical engineering from the School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China, in 2013, and the Ph.D. degree from Zhejiang University, Hangzhou, China in 2019. He is currently a Postdoc with Power Electronics Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland. From March 2016 to March 2017, he was a Research Intern with the GE Global Research Center, Shanghai, China. His research interests include medium voltage converters and applications of SiC power mosfets.