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个人简介
Berthold Schmidt (M'99) was born in Würzburg, Germany, in 1968. He received the M.Sc. degree in physics from the State University of New York at Albany, and the Diploma degree from the Julius-Maximilian University of Würzburg, Germany, in 1991 and 1994, respectively. In 1999, he received the Dr. rer. nat. degree in physics from the Technical University Munich, Germany.
From 1995 to 1998, he was an Associated Employee in the department for corporate research and development of the Siemens AG, Munich, Germany. His research interest was focused on the improvement of wavelength tunable InAsP–InP laser diodes and other optoelectronic devices. From December 1998 to 2000, he was with JDS Uniphase as a Project Leader for the development of GaAs-based pump laser diodes. Since the end of 2000, he has been a manager for “Advanced Devices” first at Nortel Networks and, since 2002, at Bookham. In this position, he is responsible for the development and qualification of high-power semiconductor laser products for telecom and industrial applications. He has authored or coauthored more than 30 articles on semiconductor optoelectronics in scientific journals, conference proceedings, and books.
Dr. Schmidt is member of the DPG and SPIE, and a Board Member of the Swiss Society for Optics and Microscopy (SSOM).
研究兴趣
论文共 75 篇作者统计合作学者相似作者
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Chinese Optics Lettersno. 2 (2023): 021401-021401
S. Heinemann, S. D. McDougall, G. Ryu, L. Zhao,X. Liu, C. Holy,C-L. Jiang, P. Modak, Y. Xiong, T. Vethake,S. G. Strohmaier,B. Schmidt,H. Zimer
High-Power Diode Laser Technology XVI (2018)
Stephan Strohmaier,G. Erbert,T. Rataj, A. H. Meissner-Schenk,V. Loyo-Maldonado, C. Carstens,H. Zimer,B. Schmidt,T. Kaul,M. M. Karow,M. Wilkens,Paul Crump
High-Power Diode Laser Technology XVI (2018): 53-58
HIGH-POWER DIODE LASER TECHNOLOGY XVI (2018)
2017 IEEE High Power Diode Lasers and Systems Conference (HPD)pp.33-34, (2017)
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作者统计
#Papers: 75
#Citation: 743
H-Index: 19
G-Index: 23
Sociability: 5
Diversity: 2
Activity: 1
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