基本信息
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职业迁徙
个人简介
Arne Knauer received the Diploma degree in physics from the State University of Chisinau,
Chisinău, Moldova, in 1981, for his work on the epitaxy and optical properties of ZnSe layers on sapphire, and
the Ph.D. degree in physics from the Humboldt University Berlin, Berlin, Germany, in 1990. In 1981, he joined the
Central Institute of Optics and Spectroscopy, Academy of Sciences, Berlin, where he was working on the material
science of semiconductor lasers (0.85 and 1.55 μm). Since 1992, he has been with the Ferdinand-Braun-Institute
Berlin, where he is working on MOVPE and characterization of (Al,Ga,In)(As,P)- and (Al,Ga,In)N-related device
structures.
研究兴趣
论文共 249 篇作者统计合作学者相似作者
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APPLIED PHYSICS LETTERSno. 6 (2024)
Semiconductor Science and Technology (2024)
Applied physics lettersno. 19 (2023)
Jan Ruschel,Jens W. Tomm,Johannes Glaab,Tim Kolbe,Arne Knauer,Jens Rass,Neysha Lobo-Ploch, Tamukanashe A. Musengezi,Sven Einfeldt
APPLIED PHYSICS LETTERSno. 13 (2023)
Semiconductor science and technologyno. 6 (2022): 065019-065019
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作者统计
#Papers: 249
#Citation: 5605
H-Index: 39
G-Index: 65
Sociability: 6
Diversity: 3
Activity: 12
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