Michael L. Alles

Michael L. Alles (M’85) was born in Youngstown, OH, in 1965. He received the B.E. degree in electrical engineering with a double major in physics, the M.S. degree in electrical engineering, and the Ph.D. degree in electrical engineering from Vanderbilt University, Nashville, TN, in 1987, 1990, and 1992, respectively. From 1991 to 2003, he held various positions in the semiconductor industry, including with Harris Corporation, Ibis Technology Corporation, and Silvaco, Inc. He joined the Institute for Space and Defense Electronics (ISDE), Vanderbilt University, in 1993, where he is currently a Research Professor of Electrical Engineering and the Associate Director of ISDE. For the past 13 years, his research has focused on the application of advanced and emerging semiconductor technologies in radiation environments. He has over 150 publications and holds two patents. His work included device and circuit modeling and design, semiconductor manufacturing and metrology, development and support of computer aided design tools, and modeling and simulation of radiation effects in semiconductor devices and circuits. Dr. Alles is a member of the IEEE Electron Devices Society and the Nuclear and Plasma Sciences Society. He served on the Semiconductor Industry Association International Technology Roadmap for Semiconductors starting materials working group, including chairing the silicon-on-insulator materials group for the 2001 revision, and has been a Reviewer of the IEEE Transactions on Nuclear Science and a short Course Instructor of the IEEE Nuclear and Space Radiation Effects Conference and the International Reliability Physics Symposium. He currently serves on the Technical Committee of the IEEE S3S Conference.