基本信息
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职业迁徙
个人简介
Alexey Vert received the B.S. degree in applied physics and mathematics from the Moscow Institute of Physics and Technology, Moscow, Russia, in 1999 and the M.S. and Ph.D. degrees in electrical engineering from Cornell University, Ithaca, NY in 2001 and 2004, respectively.
He is currently with the General Electric Research Center, Niskayuna, NY. He was a Post-Doctoral Research Associate with Cornell University until 2004, where he focused on design and fabrication of AlGaN/GaN high electron mobility transistors. His current research interests include development of novel wide bandgap semiconductor devices, SiC-based high-temperature integrated circuits and packaging, SiC photo detectors and avalanche photodiodes for a variety of UV imaging and harsh environment applications, and high-temperature GaN and SiC-based sensors and electronic components.
研究兴趣
论文共 60 篇作者统计合作学者相似作者
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arXiv (Cornell University) (2022)
arXiv (Cornell University) (2020)
Bulletin of the American Physical Society (2017)
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作者统计
#Papers: 60
#Citation: 959
H-Index: 18
G-Index: 30
Sociability: 5
Diversity: 2
Activity: 5
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