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个人简介
Atsushi Kohno was born in Fukuoka Prefecture, Japan, in 1967. He received the B.S., M.S., and Ph.D. degrees in physics from Kyushu University, Fukuoka, Japan, in 1990, 1992, and 1996, respectively.
From 1992 to 1994, after he received the M.S. degree, he was a researcher at SONY Corp. Research Center, Yokohama, Japan, and was engaged in research and development of laser crystallization and low temperature process for high-performance poly-Si TFTs. After he received Ph.D. degree, he was a research associate in the Department of Electrical Engineering, Hiroshima University, Hiroshima, Japan, working on silicon quantum dot and its memory application. He joined the Department of Applied Physics, Fukuoka University as a lecturer in 1999 and he has been an associate professor since 2002. His current research interests are formation, characterization, and memory application of ferroelectric thin film on silicon substrate and of silicon nanostructures.
Dr. Kohno is a member of the Materials Research Society, the Japan Society of Applied Physics, the Physical Society of Japan, the Crystallographic Society of Japan, and the Materials Research Society of Japan.
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JOURNAL OF PHYSICAL CHEMISTRY C (2023)
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#Papers: 194
#Citation: 3633
H-Index: 30
G-Index: 48
Sociability: 6
Diversity: 3
Activity: 2
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