基本信息
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职业迁徙
个人简介
Anton K. Gutakovskii was born in Novosibirsk, Russia on May in 1950. He received the diploma degree in physical electronics from the Novosibirsk Electrotechnical Institute in 1972 and the Ph.D. degree in solid state physics from the Institute of Semiconductor Physics of SB RAS, Novosibirsk/Russia, in 1982. He is the Research Scientist, the Major Scientist, the Chief of HREM group in the Institute of Semiconductor Physics SB RAS (Novosibirsk) since 1975 — present. His interests include various mode of Electron Microscopy and their applications to study semiconductor and outer materials of micro-and nanoelectronic. He is particularly interested in the field of High Resolution Electron Microscopy for studies of the atomic structure of the defects and interfaces in heteroepitaxial materials.
研究兴趣
论文共 301 篇作者统计合作学者相似作者
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Nikolay G. Galkin,Dmitri B. Migas, Neonila V. Medvedeva, Andrey B. Filonov,Sergey A. Dotsenko,Andrey M. Maslov,Igor M. Chernev,Evgenii Yu. Subbotin,Dmitrii L. Goroshko,Aleksey Yu. Samardak,Anton K. Gutakovskii,Ivan A. Tkachenko,Andrey V. Gerasimenko
COMPUTATIONAL MATERIALS SCIENCE (2024)
Denis Milakhin,Timur Malin,Vladimir Mansurov, Yan Maidebura, Dmitriy Bashkatov,Ilya Milekhin,Sergey Goryainov,Vladimir Volodin,Ivan Loshkarev,Vladimir Vdovin,Anton Gutakovskii, Sergei Ponomarev,Konstantin Zhuravlev
SURFACES AND INTERFACES (2024)
MATERIALS LETTERS (2024)
Surfaces and Interfaces (2023): 102920-102920
CRYSTALSno. 2 (2023)
Materials Letters (2022): 132162-132162
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作者统计
#Papers: 305
#Citation: 3520
H-Index: 25
G-Index: 46
Sociability: 7
Diversity: 3
Activity: 36
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