Guy M. Cohen received the B.Sc. degree in electrical engineering from Technion—Israel Institute of Technology, Haifa, Israel, in 1988, the M.Sc. degree in physical electronics from Tel Aviv University, Tel Aviv, Israel, in 1993, and the Ph.D. degree in electrical engineering from Technion—Israel Institute of Technology in 1998. His Ph.D. research included the study of tunnel devices and FETs made with InP/InGaAsP and related alloys for analog applications. In 1996, he was a Visiting Scholar with CNET, France-Telecom Laboratories, Bangneux, France, where he studied amphoteric carbon doping of InGaAsP layers matched to InP. Since 1998, he has been with the IBM T.J. Watson Research Center, Yorktown Heights, NY, where he has worked on topics such as self-aligned double-gate MOSFETs, silicide for thin SOI, compliant substrates, strained-silicon-on-silicon, and mixed-orientation substrates. He has authored more than 30 technical papers. He is the holder of 40 U.S. and international patents. His current research interests include the study of silicon nanowires for CMOS technology.