1.2 A/mm Drain Current Density and 1.1 Ω Mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials(2020)
摘要
2020 International Conference on Solid State Devices and Materials ,1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond
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