Threshold Voltage Control of Hf-based High-κ Gate Stack System by Fluorine Incorporation into Channel and Its Impact on Short-Channel Characteristics
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS(2007)
摘要
A threshold voltage lowering of up to 400 mV in HfSiON/polycrystalline silicon (poly-Si) gate stack p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) by fluorine incorporation into the channel is observed. Physical analysis verifies that implanted fluorine exists only in the channel region. The characteristics of the short-channel devices are investigated in detail, and an acceptor generation model by fluorine implantation is proposed. The model successfully explains the characteristics of fluorine-incorporated short-channel pMOSFETs.
更多查看译文
关键词
MOSFET,high-kappa,HfSiON,threshold voltage,fluorine,channel,buried channel
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要