A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications

In this work, a universal carrier backscattering model was proposed and developed for the ballistic analysis of thin channel nanoscale transistors, which extends the usage of the traditional backscattering model down to sub-4 K; 14-nm Si n-channel MOSFETs were characterized for the parameter correction and model validation of the developed cryogenic carrier backscattering (CCB) model. Additionally, the generality of the model was examined on an 18-nm fully depleted silicon-on-insulator (FDSOI) FET. Compared with the more complicated cryogenic virtual source (CVS) model and compact models, the CCB model is more physical and time efficient for carrier transport study. The ballistic transport characteristics based on the CCB model show that low-temperature (LT) technology can push the transistors approaching their ballistic transport limit and, therefore, is a promising solution for low-power high-performance logic applications.