Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited In_xZn_1-xO Channel Thin-Film Transistors

This study focuses on the fabrication of high-performance thin-film transistors (TFTs) using an atomic layer deposited (ALD) ultra-thin (4 nm) amorphous InXZn1-XO (IZO) channel. We investigated the impact of composition and annealing on the performance of TFTs with InxZn1-xO channel layers (x=0.3, 0.5, 0.8, and 1). Among the various compositions, the TFT with In0.5Zn0.5O channel demonstrated optimal electrical characteristics for normally-off operation and integration with complementary metal-oxide-semiconductor (CMOS) technology. These characteristics include a high mobility of 52 cm(2)/V center dot s, a positive threshold voltage of 0.1 V, a low subthreshold gate swing of 83 mV/decade, and an ION/IOFF current ratio over 109.