A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power Devices
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2023)
摘要
In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic
$R_{\text{ON}}$
behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic
$R_{\text{ON}}$
. Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic
$R_{\text{ON}}$
, featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible
$R_{\text{ON}}$
degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.
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关键词
GaN,dynamic RON,hard-switching,lifetime acceleration factor
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