Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

This brief proposes a compact spin-orbit torque magnetic random-access memory (SOT-MRAM) cell structure with high read performance for embedded nonvolatile memory (eNVM) applications. The memory cell is composed of one transistor, two Schottky diodes, two magnetic tunnel junctions (MTJs) and one shared heavy metal (HM) layer, which can be abbreviated as 1T-2D-2MTJ cell. The two MTJs are stacked on the same HM layer for smaller area overhead and configured to be complementary with the magnetization of their pinned layers in the opposite direction to double the read sense margin. The write operation is also simplified since a current through the HM layer changes the resistances of both MTJs simultaneously. The evaluations include the micromagnetic simulation of the SOT device, the analysis of PVT variations for the read operation on bit-cell level, the estimation of bit-cell area and the simulations of performance and power consumption on array level. The results show that the proposed SOT-MRAM improves the performance and reliability of the read operation and achieves 75% (50%) reduction in bit-cell area compared to 4T-2MTJ SOT-MRAM (2T-2MTJ STT-MRAM), 83.0% reduction in write power consumption and 91.1% reduction in write latency compared to 2T-2MTJ STT-MRAM.