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个人简介
Shiyan Li received the B.S. degree from the Department of Physics, Shandong University, Jinan, China, in 2011, and the Ph.D. degree from the School of Microelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, in 2016.
Since 2016, he has been an Electronic Device Design Engineer with Nanjing Electronic Devices Institute, Nanjing, China. His current research interests include high voltage SiC power devices and all SiC power modules.
研究兴趣
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2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)pp.57-60, (2023)
IEEE Transactions on Electron Devicesno. 7 (2023): 3813-3819
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)pp.133-135, (2023)
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.198-200, (2022)
2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)pp.17-24, (2021)
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